Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-03-07

2009-06-30

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257SE29257

Reexamination Certificate

active

07554153

ABSTRACT:
A power semiconductor device which includes an implant region in the base region thereof to reduce Qgd.

REFERENCES:
patent: 5326711 (1994-07-01), Malhi
patent: 5998833 (1999-12-01), Baliga
patent: 6049104 (2000-04-01), Hshieh et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 6750105 (2004-06-01), Disney
patent: 6882005 (2005-04-01), Disney
patent: 7091080 (2006-08-01), Spring et al.
patent: 2003/0132460 (2003-07-01), Tabuchi et al.
patent: 2004/0065920 (2004-04-01), Henson
patent: 2007/0132014 (2007-06-01), Hueting
patent: 2007/0210356 (2007-09-01), Henson
patent: WO 02/13257 (2007-04-01), None
Office Actions issued in U.S. Appl. No. 11/110,467 on Oct. 12, 2007 and Nov. 2, 2007.
International Search Report issued Dec. 15, 2005 in PCT Application Serial No. PCT/US05/22917.
German Office Action dated Apr. 30, 2007 in German Application Serial No. 11 2005 001 434.7-33 and Summary of the Office Action in English.

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