Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-11
2009-06-30
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S289000, C257S368000, C257SE27060, C257SE21131, C438S197000, C438S285000, C438S442000
Reexamination Certificate
active
07554139
ABSTRACT:
A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate having a device isolation structure (STI) formed in an isolation region70for partitioning the principal face into a plurality of device active regions50, 60; step (B) of growing an epitaxial layer containing Si and Ge on selected device active regions50among the plurality of device active regions50, 60of the principal face of the semiconductor layer; and step (C) of forming a transistor in, among the plurality of device active regions50, 60, each of the device active regions50on which the epitaxial layer is formed and each of the device active regions A2on which the epitaxial layer is not formed. Step (A) includes step (a1) of forming, in the isolation region70, a plurality of dummy regions80surrounded by the device isolation structure (STI), and step (B) includes step (b1) of growing a layer of the same material as that of the epitaxial layer on selected regions among the plurality of dummy regions80.
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International Search Report for corresponding Application No. PCT/JP2005/007031 mailed Jul. 26, 2005.
Inoue Akira
Kawashima Yoshio
Sorada Haruyuki
Takagi Takeshi
Panasonic Corporation
Quach Tuan N.
Renner, Otto, Boiselle & Sklar LLP
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