Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-10-31
2009-06-30
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S438000, C257S347000, C257SE29273, C257SE21411, C257SE21215
Reexamination Certificate
active
07553713
ABSTRACT:
A semiconductor substrate includes a semiconductor base substrate that has an oxide film selectively formed on a part thereof, the oxide film having a non-uniform thickness; and a semiconductor layer that is formed on the oxide film by epitaxial growth so as to have a non-uniform thickness.
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Sakai, et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications.” Second International SiGe Technology and Device Meeting Abstract, pp. 230-231, May 2004.
Chaclas George N.
Edwards Angell Palmer & & Dodge LLP
Penny, Jr. John J.
Seiko Epson Corporation
Wilczewski M.
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