Method for filling a trench in a semiconductor product

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S626000, C438S631000, C438S633000

Reexamination Certificate

active

07638434

ABSTRACT:
Method for filling a trench in a semiconductor product is disclosed. A first material is deposited onto a semiconductor product having a surface in which at least one trench is formed. A first layer is formed within the trench and on the surface of the semiconductor product outside the trench. A second material is deposited to form a second layer above the first layer outside the trench and the trench is filled. Chemical mechanical polishing is performed so that the second layer is removed above the first layer outside the trench and whereby the first layer is at least uncovered outside the trench. Residual first material of the first layer is removed by wet-chemical etching.

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