Nonvolatile memory device and methods of programming and...

Details Nonvolatile memory device and methods of programming and... Nonvolatile memory device and methods of programming and...

2008-06-10

2009-06-09

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185090

Reexamination Certificate

active

07545677

ABSTRACT:
A read method of a non-volatile memory device includes reading an initial threshold voltage value of an index cell from threshold voltage information cells that store information indicating the initial threshold voltage, determining a current threshold voltage value from the index cell, and comparing the initial threshold voltage value and the current threshold voltage value to calculate a shifted threshold voltage level of the index cell. A read voltage is changed by the shifted threshold voltage level to read user data using the changed read voltage.

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