Semiconductor device and method of manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S666000, C257S737000, C257SE23021

Reexamination Certificate

active

07544598

ABSTRACT:
A method of manufacturing a semiconductor device, including: providing a semiconductor substrate which has a plurality of electrodes and in which a depression is formed on a side on which the electrodes are formed; forming a resin protrusion on the semiconductor substrate so that part of the resin protrusion is positioned in the depression; and forming an interconnect on the resin protrusion, the interconnect being electrically connected to at least one of the electrodes.

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patent: 2001/0007375 (2001-07-01), Fjelstad et al.
patent: 2002/0076908 (2002-06-01), Makino et al.
patent: 2005/0200029 (2005-09-01), Hashimoto
patent: 1584672 (2005-02-01), None
patent: 1604721 (2005-04-01), None
patent: A 02-272737 (1990-11-01), None

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