Method and apparatus for fast identification of high stress...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

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07543254

ABSTRACT:
Roughly described, high-stress volumetric regions of an integrated circuit structure are predicted by first scanning one or more layout layers to identify planar regions of high 2-dimensional stress, and then performing the much more expensive 3-dimensional stress analysis only on volumetric regions corresponding to those planar regions that were found to have high 2-dimensional stress. A windowing method can be used for the 2-dimensional scan, optionally with an overlap region extending slightly into adjacent windows. Very narrow features arising at the edges of an analysis window can be relocated to the edge of the analysis window in order to avoid numerical artifacts.

REFERENCES:
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patent: 5675521 (1997-10-01), Holzhauer et al.
patent: 7337420 (2008-02-01), Chidambarrao et al.
Ogunjimi, A.O., et al. “A Comparison of Modelling Methods for Electronic Interconnect Structures,” IEEE Proceedings of 43rd Electronic Components and Technology Conference Jun. 1993, 871-876.

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