Semiconductor device having a field effect transistor using...

Details Semiconductor device having a field effect transistor using... Semiconductor device having a field effect transistor using...

2005-10-21

2009-06-30

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257S410000, C257SE21433

Reexamination Certificate

active

07554156

ABSTRACT:
In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

REFERENCES:
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patent: 2003/0042548 (2003-03-01), Maeda et al.
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A. Kaneko. et al., “Flatband Voltage Shift Caused by Dopants Diffused from Poly-Sl Gate Electrode in Poly-Si/HfSlO/SlO2/Sl”, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials. Tokyo, 2003, pp. 56-57.

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