Rough polishing method of semiconductor wafer and polishing...

Details Rough polishing method of semiconductor wafer and polishing... Rough polishing method of semiconductor wafer and polishing...

2007-09-28

2009-06-02

Morgan, Eileen P. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

With indicating

C451S036000, C451S041000, C451S057000, C451S060000, C451S446000, C216S084000, C216S089000

Reexamination Certificate

active

07540800

ABSTRACT:
A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

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patent: 6189546 (2001-02-01), Zhang et al.
patent: 2001/0037821 (2001-11-01), Staley et al.
patent: 2003/0077982 (2003-04-01), Takizawa
patent: 7-314324 (1995-12-01), None
patent: 2000-015571 (2000-01-01), None
patent: 3202305 (2001-06-01), None

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