MTJ read head with sidewall spacers

Details MTJ read head with sidewall spacers MTJ read head with sidewall spacers

2007-07-03

2009-06-09

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S649000, C257S760000, C257SE21170, C257SE21221, C257SE21293, C257SE21304, C257SE21646

Reexamination Certificate

active

07544983

ABSTRACT:
Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may protrude through the top surface of the oxide after CMP, the spacers serve to prevent possible later shorting to the stack.

REFERENCES:
patent: 6046471 (2000-04-01), Gardner et al.
patent: 6265292 (2001-07-01), Parat et al.
patent: 6376384 (2002-04-01), Yen et al.
patent: 6475857 (2002-11-01), Kim et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6770927 (2004-08-01), Cho et al.
patent: 7045368 (2006-05-01), Hong et al.
patent: 7241632 (2007-07-01), Yang
patent: 2004/0191928 (2004-09-01), Shi
patent: 2004/0205958 (2004-10-01), Grynkewich et al.

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