Exploiting a statistical distribution of the values of an...

Details Exploiting a statistical distribution of the values of an... Exploiting a statistical distribution of the values of an...

2005-12-23

2009-12-08

Le, Vu A (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185200, C365S210150

Reexamination Certificate

active

07630263

ABSTRACT:
In a semiconductor memory device, a method for obtaining at least one reference cell adapted to be exploited as a generator of a reference signal, the reference signal depending on a value of an electrical characteristic of the at least one reference cell. The method includes providing a population of auxiliary cells, operating on said population of auxiliary cells for varying a value of the electrical characteristic thereof, in such a way that the varied values are statistically distributed in a range including a value of the electrical characteristic corresponding to the reference signal, and choosing the at least one reference cell, wherein choosing includes choosing at least one auxiliary cell in the population of auxiliary cells having the value of the electrical characteristic close to the value corresponding to the reference signal with a pre-defined tolerance.

REFERENCES:
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patent: 2005/0141277 (2005-06-01), Furuyama
patent: 2006/0126391 (2006-06-01), Kim et al.

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