Multi-bit nonvolatile memory device and related programming...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185110, C365S185140, C365S185180

Reexamination Certificate

active

07548457

ABSTRACT:
In a method of programming a nonvolatile memory device including a plurality of n-valued nonvolatile memory cells arranged in a matrix, wherein n is a natural number greater than or equal to two (2), the method includes; programming i-valued data to three or more memory cells contiguously arranged along a first direction of the matrix before programming (i+1)-valued data to any of the three or more memory cells, wherein i is less than n, and wherein the three or more memory cells are programmed during three or more respectively distinct program periods, and after programming the i-valued data to the three or more memory cells, programming (i+1)-valued data to a particular memory cell among the three or more memory cells.

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