Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2006-09-18

2009-10-13

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27111

Reexamination Certificate

active

07602020

ABSTRACT:
A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film.

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