Apparatus and methods for determining memory device faults

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S200000, C365S207000, C365S189070

Reexamination Certificate

active

07548473

ABSTRACT:
A test circuit used for determining a fault in a memory device. The test circuit includes a read circuit configured to read memory cell contents in a memory device at a first time instant and second time instant. The test circuit includes a comparator that compares the contents at the first and second time instants. If the contents are different from one another, the comparator indicates that a fault has occurred. Test methods are also used to determine if a fault has occurred in a memory cell.

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