Thin-film device and method of manufacturing same

Details Thin-film device and method of manufacturing same Thin-film device and method of manufacturing same

2006-10-27

2009-10-27

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S306000, C257S307000, C257S310000, C257SE29343, C438S243000, C438S386000, C438S242000, C438S244000, C438S253000, C438S387000, C438S396000

Reexamination Certificate

active

07608881

ABSTRACT:
A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer disposed on the flattening film; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the flattening film is smaller than that of the top surface of the substrate and equal to or smaller than the thickness of the dielectric film. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.

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