Semiconductor device having SiOxNy film

Details Semiconductor device having SiOxNy film Semiconductor device having SiOxNy film

2004-07-15

2009-06-16

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S061000, C257S072000, C349S043000, C349S046000

Reexamination Certificate

active

07547915

ABSTRACT:
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNyis formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNyis formed under the active layer. The active layer includes a metal element at a concentration of 1×1015to 1×1019cm−3and hydrogen at a concentration of 2×1019to 5×1021cm−3.

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