Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-06-27

2009-10-06

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S259000, C438S587000, C438S296000, C438S593000, C438S792000, C257SE29129, C257SE29309, C257SE21625, C257SE21422

Reexamination Certificate

active

07598562

ABSTRACT:
A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined on the semiconductor substrate; a memory cell transistor formed in an element forming region isolated by the element isolating regions of the semiconductor substrate; and the memory cell transistor includes a gate insulating film formed on a surface of the element forming region; a floating gate formed over the gate insulating film; an inter-gate insulating film formed integrally so as to cover the floating gate and the insulating film of the element isolation region and having high dielectric constant in a portion corresponding to the floating gate and low dielectric constant in a portion corresponding to the insulating film of the element isolation region; and a control gate stacked over the floating gate via the inter-gate insulating film.

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