Method of fabricating recess channel in semiconductor device

Details Method of fabricating recess channel in semiconductor device Method of fabricating recess channel in semiconductor device

2006-12-28

2009-12-01

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S704000, C257SE21176

Reexamination Certificate

active

07625813

ABSTRACT:
A method of fabricating a recess channel in a semiconductor device includes forming a hard mask pattern over a substrate, etching the substrate using the hard mask pattern to form first recesses, forming an insulation layer over the hard mask pattern and the first recesses, etching the insulation layer to form spacers on sidewalls of the first recesses and on sidewalls of the hard mask pattern, etching the substrate below the first recesses to form second recesses using a sulfur fluoride containing gas mixture, and removing the hard mask pattern and the spacers.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 6479348 (2002-11-01), Kamal et al.
patent: 6682996 (2004-01-01), Blosse
patent: 6790779 (2004-09-01), Schermerhorn et al.
patent: 2007/0269952 (2007-11-01), Chong et al.
patent: 1002-244325 (2001-09-01), None
patent: 2001-244325 (2001-09-01), None

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