Semiconductor device

Details Semiconductor device Semiconductor device

2007-09-04

2009-12-08

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S682000, C438S683000, C257S754000, C257S768000, C257SE21438

Reexamination Certificate

active

07629254

ABSTRACT:
Embodiments relater to a semiconductor device and a method of fabricating the same. A source/drain area may be formed by using the spacer having the dual structure of the oxide layer and nitride layer. After etching a part of the oxide layer, the salicide layer may be formed on the gate electrode and the source/drain area, and the spacer may be removed. The contact area may be ensured, so a higher degree of integration may be achieved.

REFERENCES:
patent: 5103272 (1992-04-01), Nishiyama
patent: 6013569 (2000-01-01), Lur et al.
patent: 6541328 (2003-04-01), Whang et al.
patent: 6987062 (2006-01-01), Iizuka et al.
patent: 2003/0183881 (2003-10-01), Lee et al.
patent: 2006/0094176 (2006-05-01), Fehlhaber et al.
patent: 2007/0152284 (2007-07-01), Park
patent: 100233557 (1999-09-01), None
patent: 1020050071786 (2005-07-01), None

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