Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-21
2009-10-06
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S701000, C257SE21577, C257SE21578
Reexamination Certificate
active
07598169
ABSTRACT:
A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.
REFERENCES:
patent: 2006/0121721 (2006-06-01), Lee et al.
patent: 2006/0183314 (2006-08-01), Dellaguardia et al.
DellaGuardia Ronald A.
Huang Elbert E.
Lin Qinghuang
Tyberg Christy S.
Dougherty Anne Vachon
International Business Machines - Corporation
Lee Cheung
Morris Daniel P.
Mulpuri Savitri
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