Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-27
2009-06-23
Lindsay, Jr., Walter L (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S493000, C257S342000, C257SE29024, C438S286000
Reexamination Certificate
active
07550804
ABSTRACT:
A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second portions (44, 54). The first portions (44) may have a first thickness, and the second portions (54) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality of second semiconductor regions (42) within the semiconductor substrate may each be positioned at least one of directly below and directly above a respective one of the first portions (44) of the first semiconductor region and laterally between a respective pair of the second portions (54) of the first semiconductor region. A third semiconductor region (56) within the semiconductor substrate may have the first dopant type. A gate electrode (64) may be over at least a portion of the first semiconductor region and at least a portion of the third semiconductor region (56).
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Bose Amitava
Khemka Vishnu K.
Roggenbauer Todd C.
Zhu Ronghua
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz PC
Kim Sun M
Lindsay, Jr. Walter L
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