Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-02-05

2009-06-30

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S653000, C438S674000, C257S762000, C257S774000, C257S760000, C257SE21376, C257SE21171, C257SE21593

Reexamination Certificate

active

07553757

ABSTRACT:
An interlayer insulator includes a first interlayer insulator and a second interlayer insulator formed on the first interlayer insulator and having a property of preventing diffusion of copper. A barrier metal film is formed on an inner wall in the wiring trench except an upper end and operative to prevent copper contained in the Cu wiring from diffusing into the interlayer insulator. The Cu wiring is brought into contact with the second interlayer insulator at the upper end and covered with the barrier metal film at a lower portion below the upper end.

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Notification of Reason(s) for Refusal, mailed Aug. 26, 2008, from the Japan Patent Office in counterpart Patent Application No. 2006-028053.

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