Semiconductor device having a field effect source/drain region

Details Semiconductor device having a field effect source/drain region Semiconductor device having a field effect source/drain region

2006-12-20

2009-11-24

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Transistors or diodes

C365S063000, C365S185050, C365S185170, C257S256000, C257S347000, C257SE21210, C438S186000, C438S257000

Reexamination Certificate

active

07623366

ABSTRACT:
A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device.

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English Abstract for Publication No. 100206717.
English Abstract for Publication No. 1020050106940.

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