Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-20
2009-08-18
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S257000, C257SE21180, C257SE21423, C257SE21681
Reexamination Certificate
active
07576384
ABSTRACT:
Data storage device, comprising: a stack of layers formed by an alternation of first layers with a conductivity of less than approximately 0.01 (Ω·cm)−1and second layers with a conductivity greater than approximately 1 (Ω·cm)−1, a plurality of columns disposed in the stack of layers, and passing through each layer in this stack. Each of the columns is formed by at least one portion of semiconductor material surrounded by least one electrical charge storage layer electrically insulated from the portion of semiconductor material and from the stack; and means of applying voltage to the terminals of the columns comprising a network of moving microspikes.
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Commissariat a l''Energie Atomique
Hoang Quoc D
Nixon & Peabody LLP
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