Process and apparatus for growing compound semiconductor monocry

Details Process and apparatus for growing compound semiconductor monocry Process and apparatus for growing compound semiconductor monocry

1990-07-19

1991-12-24

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118725, 118667, 118719, 156613, 156614, 156DIG20, 156DIG70, 148 33, 427 38, 427 39, C23C 1422

Patent

active

050749544

ABSTRACT:
This invention relates to an improvement in a reduced gaseous phase growing method for compound semiconductor monocrystal formed from a plurality of elements such as GaAs.
A gas of compound containing each of constitutional elements is introduced into a reduced reaction pipe of which temperature distribution is controlled, without use of H.sub.2 or He as a carrier gas. Thereby it is possible to control the amount of introduction of each of the elements of the compound semiconductor subjected to epitaxial growth.
In addition, the temperature distribution within the reaction pipe is controlled and the temperature of the crystal substrate is maintained at a relatively low temperature to improve the quality of the growing crystal.

REFERENCES:
patent: 4010045 (1977-03-01), Ruehrwein
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4250205 (1981-02-01), Constant et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4488506 (1984-12-01), Heinecke et al.
patent: 4492716 (1985-01-01), Yamazaki
patent: 4526805 (1985-07-01), Yoshizawa
patent: 4636401 (1987-01-01), Yamazaki et al.
J. W. Matthews, "Epitaxial Growth, Part A", Academic Press (1975), pp. 102-107.

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