MOS transistor and manufacturing method thereof

Details MOS transistor and manufacturing method thereof MOS transistor and manufacturing method thereof

2005-12-30

2009-10-06

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S333000, C257S347000, C257S353000, C257SE29255

Reexamination Certificate

active

07598550

ABSTRACT:
There are provided a MOS transistor and a manufacturing method thereof. The MOS transistor includes a substrate on which an insulating layer is formed, a gate embedded in the insulating layer, wherein the top surface of the gate is exposed, a gate oxide layer formed on the insulating layer and the gate, a silicon layer formed on the gate oxide layer, and a source region and a drain region formed in the silicon layer to be in contact with the gate oxide layer.

REFERENCES:
patent: 3730778 (1973-05-01), Shannon et al.
patent: 7095077 (2006-08-01), Kataoka et al.
patent: 7119435 (2006-10-01), Lee
patent: 7145172 (2006-12-01), Peng et al.
patent: 2002/0014626 (2002-02-01), Nakajima et al.
patent: 2002/0185684 (2002-12-01), Campbell et al.
patent: 2004/0152272 (2004-08-01), Fladre et al.
patent: 10 1997 0005704 (1997-04-01), None
patent: 10 0474388 (2005-02-01), None
Office Action from the Korean Intellectual Property Office, dated Nov. 17, 2006, in counterpart Korean Patent Application No. 10-2005-0111180.

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