Method of growing nitride semiconductor material

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S235000, C257SE21053, C257SE21126, C257SE21127, C257SE21352, C257SE21372

Reexamination Certificate

active

07608532

ABSTRACT:
A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light emission efficiency of a quantum well or quantum dots of the produced LED as well as greatly increase yield. The method is also applicable to the fabrications of electronic devices made of nitride semiconductor material and diodes of high breakdown voltage for rectification. The method can greatly increase surface flatness of semiconductor material for HBT, thereby increasing quality of the produced semiconductor devices.

REFERENCES:
patent: 6440214 (2002-08-01), Hooper et al.
patent: 6806115 (2004-10-01), Koide et al.
patent: 7182811 (2007-02-01), Ishida
patent: 7235818 (2007-06-01), Kim et al.
patent: 7358112 (2008-04-01), Barnes et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of growing nitride semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of growing nitride semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of growing nitride semiconductor material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4134631

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.