Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-11-30

2009-10-13

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000

Reexamination Certificate

active

07601572

ABSTRACT:
In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.

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