Semiconductor device with robust polysilicon fuse

Details Semiconductor device with robust polysilicon fuse Semiconductor device with robust polysilicon fuse

2006-06-26

2009-08-18

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257S665000

Reexamination Certificate

active

07576374

ABSTRACT:
A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.

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