Method of forming a transistor having gate protection and...

Details Method of forming a transistor having gate protection and... Method of forming a transistor having gate protection and...

2006-06-28

2009-06-09

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S595000, C257SE21176

Reexamination Certificate

active

07544594

ABSTRACT:
A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.

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