Imaging device and imaging system

Details Imaging device and imaging system Imaging device and imaging system

2005-08-31

2009-12-29

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S231000, C257S232000, C257S290000, C257S292000, C257SE27131, C257SE27132, C257SE27133

Reexamination Certificate

active

07638826

ABSTRACT:
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes101A and101B, plural transfer MOSFETs102A and102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET104which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

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