Photoresist undercoat-forming material and patterning process

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S270100, C430S323000, C430S326000, C528S129000, C528S153000

Reexamination Certificate

active

07632624

ABSTRACT:
A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R1and R2are H, alkyl, aryl or alkenyl, R3and R4are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R5and R6are alkyl having a ring structure, or R5and R6bond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3and Cl2/BCl3gases for substrate processing.

REFERENCES:
patent: 3398120 (1968-08-01), Hindersinn et al.
patent: 5942594 (1999-08-01), Nakae et al.
patent: 5972560 (1999-10-01), Kaneko et al.
patent: 6042989 (2000-03-01), Schaedeli et al.
patent: 6420088 (2002-07-01), Angelopoulos et al.
patent: 6506497 (2003-01-01), Kennedy et al.
patent: 6623909 (2003-09-01), Hatakeyama et al.
patent: 6730453 (2004-05-01), Nakashima et al.
patent: 6852791 (2005-02-01), Kawaguchi et al.
patent: 7358025 (2008-04-01), Hatakeyama
patent: 2006/0204891 (2006-09-01), Hatakeyama
patent: 2006/0288263 (2006-12-01), Nakamura et al.
patent: 0 614 769 (1994-09-01), None
patent: 6-118651 (1994-04-01), None
patent: 9-110938 (1997-04-01), None
patent: 10-324748 (1998-12-01), None
patent: 11-302382 (1999-11-01), None
patent: 2001-40293 (2001-02-01), None
patent: 2002-14474 (2002-01-01), None
patent: 2002-55456 (2002-02-01), None
patent: 2002-214777 (2002-07-01), None
patent: 2004-177666 (2004-06-01), None
W. Brunsvold et al.; “Evaluation of a Deep UV Bilayer Resist for Sub-Half Micron Lithography”, SPIE vol. 1925 (1993), p. 377.
J. Hatakeyama et al., “Investigation of Discrimination Enhancement in Polysilesquioxane Based Positive Resist for ArF Lithography”; SPIE vol. 333 (1998), p. 62.
Ulrich Schaedeli et al.; “Evaluation of Materials for 193-nm Lithography”; Journal of Photopolymer Science and Technology, vol. 9, No. 3(1996), pp. 435-446.
Ranee Kwong et al.; “IBM 193nm Bilayer Resist: Materials, Lithographic Performance and Optimization”; SPIE vol. 4345, p. 50 (2001).
J.M.Moran et al.; “High Resolution, steep profile resist patterns”; J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979.
Tom Lynch et al.; “Properties and Performance of Near UV Reflectivity Control Layers”; SPIE vol. 2195, pp. 225-229 (1994).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoresist undercoat-forming material and patterning process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist undercoat-forming material and patterning process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist undercoat-forming material and patterning process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4130837

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.