Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-10-10

2009-11-24

Maldonado, Julio J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257S391000, C257SE29263, C257SE21443, C257SE21618, C438S276000

Reexamination Certificate

active

07622777

ABSTRACT:
A threshold control layer of a second MIS transistor is formed under the same conditions for forming a threshold control layer of a first MIS transistor. LLD regions of the second MIS transistor are formed under the same conditions for forming LDD regions of a third transistor.

REFERENCES:
patent: 6143594 (2000-11-01), Tsao et al.
patent: 2003-017582 (2003-01-01), None

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