Semiconductor memory device with temperature sensing device...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S189050, C365S189080, C365S189090, C365S189120, C365S194000, C365S236000

Reexamination Certificate

active

07551501

ABSTRACT:
A semiconductor memory device includes a thermosensor that senses present temperatures of the device and confirms whether the temperature values are valid. The thermosensor includes a temperature sensing unit, a storage unit and an initializing unit. The temperature sensing unit senses temperatures in response to a driving signal. The storage unit stores output signals of the temperature sensing unit and outputs temperature values. The initializing unit initializes the storage unit after a predetermined time from an activation of the driving signal. A driving method includes driving the thermosensor in response to the driving signal, requesting a re-driving after a predetermined time from the activation of the driving signal, and re-driving the thermosensor in response to the driving signal input again.

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Chinese Office Action, w/ English translation thereof, issued in Chinese Patent Application No. CN 2007100863595 dated Dec. 19, 2008.

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