Semiconductor probe with high resolution resistive tip...

Details Semiconductor probe with high resolution resistive tip... Semiconductor probe with high resolution resistive tip...

2007-01-12

2009-10-13

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S762010, C438S014000

Reexamination Certificate

active

07602202

ABSTRACT:
A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.

REFERENCES:
patent: 5923033 (1999-07-01), Takayama et al.
patent: 6028436 (2000-02-01), Akram et al.
patent: 2000-67478 (2003-03-01), None
patent: 2003-0087372 (2003-11-01), None
patent: WO03-096409 (2003-11-01), None
patent: WO 03/096409 (2003-11-01), None

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