Transistor type ferroelectric memory and method of...

Details Transistor type ferroelectric memory and method of... Transistor type ferroelectric memory and method of...

2006-12-04

2009-08-11

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S192000, C257S310000, C438S310000

Reexamination Certificate

active

07573083

ABSTRACT:
A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source electrode formed above the ferroelectric layer; a drain electrode formed above the ferroelectric layer and apart from the source electrode; and a channel layer formed above the ferroelectric layer and between the source electrode and the drain electrode.

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Non-Volatile Thin Film Transistors Using Ferroelectric/ITO Structures, E. Tokumitsu, T. Miyasako, M. Senoo; 2004 Fall Meeting, Materials Research Society (2004) pp. 1 to 6.

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