Small electrode for phase change memories

Details Small electrode for phase change memories Small electrode for phase change memories

2007-09-25

2009-02-24

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S947000, C257SE21206

Reexamination Certificate

active

07494922

ABSTRACT:
A method of manufacturing a memory cell is disclosed. In one embodiment, the method includes forming an electrode including an outer surface that is substantially circular and an exposed surface that has a sublithographic dimension in a direction parallel to the exposed surface. Further, the method may also include forming a layer of phase change material coupled to the exposed surface of the electrode. Various semiconductor devices and additional methods of manufacturing memory cells are also provided.

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