Semiconductor device evaluation method

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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C257S410000

Reexamination Certificate

active

07573065

ABSTRACT:
An apparatus for evaluating a field-effect transistor includes a pulse generator, a current/voltage converter, a switch and a first constant-voltage source. The pulse generator can be electrically connected to a gate electrode of a field-effect transistor. The current/voltage converter includes an input terminal. The input terminal can be electrically connected to a first source/drain region of the field-effect transistor. The switch can be electrically connected to a second source/drain region of the field-effect transistor. The switch switches between a connection state and a disconnection state. The first constant-voltage source can be electrically connected to the second source/drain region through the switch.

REFERENCES:
patent: 6873539 (2005-03-01), Fazan et al.
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Kerber, A. et al., “Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics,” 2003 Symposium on VLSI Technology Digest of Technical Papers, 2 Sheets, (2003).
Singh, D. V. et al., “Ultra-Fast Measurements of the Inversion Charge in MOSFETs and Impact on Measured Mobility in High-k MOSFETs” Tech. Dig. of IEDM, 4 Sheets, (2004).
Leroux, C. et al., “Characterization and Modeling of Hysteresis Phenomena in High K Dielectrics,” Tech. Dig. of IEDM, 4 Sheets, (2004).
Iijima, R. et al., “Experimental Clarification of Mobility Determing Factors in HfSiON CMISFETs with Various Film Compositions,” Tech. Dig. of IEDM, 4 Sheets, (2005).

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