Method for the integration of two bipolar transistors in a...

Details Method for the integration of two bipolar transistors in a... Method for the integration of two bipolar transistors in a...

2006-03-03

2009-10-20

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having multiple emitter or collector structure

C438S343000, C257S563000, C257S564000

Reexamination Certificate

active

07605047

ABSTRACT:
A method for the integration of two bipolar transistors in a semiconductor body, wherein, for the first bipolar transistor, a first emitter semiconductor region, a first base semiconductor region, and a first collector semiconductor region are produced. A recombination layer is applied to the first bipolar transistor, which is adjacent to the first emitter semiconductor region or the first collector semiconductor region and is constructed in such a way that charge carriers recombine on the recombination layer, and next, the second bipolar transistor is placed on the recombination layer, wherein a second emitter semiconductor region, a second base semiconductor region, and a second collector semiconductor region are produced on the recombination layer, so that the second emitter semiconductor region or the second collector semiconductor region is adjacent to the recombination layer.

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U. Tietze, CH. Schenk: “Semiconductor Circuit Technology”, Springer-Verlag, Berlin, pp. 112-113.

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