Method of manufacturing an integrated circuit

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

Other Related Categories

C438S118000, C438S406000, C438S455000, C257SE21122, C257SE21088, C257SE21526

Type

Reexamination Certificate

Status

active

Patent number

07579268

Description

ABSTRACT:
A method of manufacturing an integrated circuit including a first isolated chip electrically and mechanically connected via wafer bonding to a second isolated chip, wherein the active faces of the chips face one another, includes: forming metallic contact zones on active faces of first and second wafers, positioning and fixing the wafers one above another at a predetermined distance such that the active faces of the wafers face one another and the contact zones are aligned, placing the fixed wafers in a bath for electroless metal deposition onto the contact zones; and removing the fixed wafers in the event that the metal layers growing on the aligned contact zones of the first and second wafers have grown together.

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