Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

2006-04-25

2009-08-11

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C257SE21310

Reexamination Certificate

active

07572685

ABSTRACT:
On a glass substrate, an insulating protective layer comprising SiO2film is formed, and an active layer comprising a p-Si film is formed thereon. Further, a first gat insulating film comprising an SiN film which serves as a lower layer and a second gate insulating film comprising an SiN film which serves as an upper layer are stacked thereon. The second gate insulating layer is then removed by etching with a gate electrode formed thereon acting as a mask. Thus, ions can be doped only through the first gate insulating film to the p-Si film with a low acceleration energy.

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