Semiconductor device having contact plug formed in double...

Details Semiconductor device having contact plug formed in double... Semiconductor device having contact plug formed in double...

2005-06-17

2009-10-20

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257SE21092, C257SE21586

Reexamination Certificate

active

07605070

ABSTRACT:
Disclosed are a contact plug of a semiconductor device and a method for fabricating the same. The semiconductor device includes: an epitaxial stack formed by inserting a heteroepitaxy layer between a pair of homoepitaxy layers; and a contact plug including a metal layer on the epitaxial stack. Accordingly, in accordance with the present invention, the contact plug is selectively doped in a high concentration, thereby reducing a contact resistance. Furthermore, the present invention also provides an effect of reducing degradation in a device property without decreasing yields of products by minimizing a thermal budget through using a SEG-silicon germanium layer capable of obtaining a high doping concentration and a high deposition speed.

REFERENCES:
patent: 6030894 (2000-02-01), Hada et al.
patent: 6333216 (2001-12-01), Norstrom
patent: 6391796 (2002-05-01), Akiyama et al.
patent: 6521508 (2003-02-01), Cheong et al.
patent: 2004/0180547 (2004-09-01), Beintner

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