Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-24
2009-10-13
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000
Reexamination Certificate
active
07602031
ABSTRACT:
Disclosed is a method of fabricating a semiconductor device that includes field effect transistors each having a gate electrode formed only of a metal silicide which overcomes the problem of depletion of the gate and makes adjustment of a work function easier, and that has a high integration with the existing process and a high cost performance. The method fabricates a semiconductor substrate, a gate electrode formed on the semiconductor substrate via a gate insulating layer, and a source and a drain having an elevated structure with the gate electrode in between, and includes a step at which the gate electrode is silicidized to form a metal silicide.
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B. Tavel et al., “Totally Silicided (CoSi2) Polysilicon: a novel approach to very low-resistive gate (˜2Ω/□) without metal CMP nor etching” Technical Digest, International Electron Devices, Dec. 2-5, 2001, pp. 37. 5.1.
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Qi Xiang et al., “Strained Silicon NMOS with Nickel-Silicide Metal Gate” VLSI Technology, Digest of Technical Papers, Jun. 10-12, 2003, pp. 101-102.
Fujitsu Microelectronics Limited
Prenty Mark
Westerman, Hattori, Daniels & Adrian , LLP.
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