Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-20
2009-02-24
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C257S324000
Reexamination Certificate
active
07495967
ABSTRACT:
A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme.
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patent: 6643170 (2003-11-01), Huang et al.
patent: 6768165 (2004-07-01), Eitan
patent: 2004/0190341 (2004-09-01), Shappir
Hsu Tzu-Hsuan
Lee Ming-Hsiu
Wu Chao-I
Elms Richard
Macronix International Co. Ltd.
Nguyen Nam
Rabin & Berdo PC
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