Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-17
2009-11-03
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000, C257SE27071
Reexamination Certificate
active
07612402
ABSTRACT:
To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film7and an insulating film8are sequentially stacked on a gate insulating film6,then the polycrystalline silicon film7and the insulating film8are patterned to form gate electrodes7A,7B, and then sidewall spacers12including a silicon oxide film are formed on sidewalls of the gate electrodes7A,7B. After that, a silicon nitride film19is deposited on a substrate1by a plasma enhanced CVD process so that the gate electrodes7A,7B are not directly contacted to the silicon nitride film19.
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Cao Phat X
Miles & Stockbridge P.C.
Renesas Technology Corp.
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