Semiconductor apparatus and method of manufacturing the same

Details Semiconductor apparatus and method of manufacturing the same Semiconductor apparatus and method of manufacturing the same

2007-06-11

2009-10-13

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S410000, C438S574000

Reexamination Certificate

active

07602016

ABSTRACT:
A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film provided therebetween. The semiconductor apparatus further comprises a gate sidewall insulating film having a three-layered structure formed of a first nitride film, an oxide film, and a second nitride film, which are formed on a sidewall of an upper portion of the gate electrode, and a gate sidewall insulating film having a two-layered structure formed of the oxide film and the second nitride film, which are formed on a sidewall of a lower portion of the gate electrode. The semiconductor apparatus further comprises a raised source/drain region formed of an impurity region formed in a surface layer of the semiconductor substrate and an impurity region grown on the impurity region.

REFERENCES:
patent: 5949105 (1999-09-01), Moslehi
patent: 6633072 (2003-10-01), Yamazaki et al.
patent: 6800536 (2004-10-01), Kurata
patent: 2002-231942 (2002-08-01), None
N. Yasutake, U.S. PTO Office Action, U.S. Appl. No. 11/808,457, Jan. 26, 2009, 8 pages.
Nobuaki Yasutake, Notice of Allowance and Fee(s) Due, U.S. Appl. No. 11/808,457, Jun. 11, 2009, 7 pages.

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