Semiconductor storage device, manufacturing method therefor,...

Details Semiconductor storage device, manufacturing method therefor,... Semiconductor storage device, manufacturing method therefor,...

2006-03-03

2009-10-06

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S296000

Reexamination Certificate

active

07598559

ABSTRACT:
A semiconductor storage device has a semiconductor layer having a first conductivity type region and two second conductivity type regions separated from each other by the first conductivity type region, a memory function body formed on a surface of the semiconductor layer, and a gate electrode. The memory function body has a charge storage insulator and a charge retention insulator positioned between the charge storage insulator and the semiconductor layer, and doubles as a gate insulating film. The charge retention insulator contains such impurity atoms (phosphorus) as would cause an intrinsic semiconductor to be of the second conductivity type.

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Machine translation of JP2004-247581 is attached.

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