Sense-amplifier circuit for a memory device with an open bit...

Details Sense-amplifier circuit for a memory device with an open bit... Sense-amplifier circuit for a memory device with an open bit...

2007-10-15

2009-06-02

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S189050, C365S210100, C365S230030

Reexamination Certificate

active

07542362

ABSTRACT:
A device for accessing a logical content of a memory cell, the memory cell including a cell capacity for storing a charge related to the logical content, wherein the cell capacity is connected between a bit line having a bit line capacity and a reference potential, the device including: a reference node having a reference capacity being smaller than the bit line capacity; and a circuit for changing a potential of the bit line and the reference node, respectively, in case of a read or write access of the memory cell, wherein the change of the potential of the bit line is conducted with a first current and the change of the potential of the reference node is conducted with a second current, wherein the first current is greater than the second current.

REFERENCES:
patent: 7177216 (2007-02-01), Suh et al.
patent: 2006/0181946 (2006-08-01), Park et al.
patent: 2006/0215472 (2006-09-01), Yoon et al.

Affiliated with

Also associated with

Rating

Sense-amplifier circuit for a memory device with an open bit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense-amplifier circuit for a memory device with an open bit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense-amplifier circuit for a memory device with an open bit... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4122733