Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-23
2009-12-29
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S199000, C438S584000, C438S585000, C438S586000, C438S597000, C438S658000, C438S659000, C438S660000, C438S663000, C438S664000, C438S674000, C438S683000, C438S684000, C438S685000
Reexamination Certificate
active
07638432
ABSTRACT:
The present invention provides a semiconductor device, comprising a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and source-drain diffusion layer formed within the semiconductor substrate in the vicinity of the gate electrode. A silicide film is formed on each of the gate electrode and the source-drain diffusion layer. The silicide film positioned on the gate electrode is thicker than the silicide film positioned on the source-drain diffusion layer. The present invention also provides a method of manufacturing a semiconductor device, in which a gate electrode is formed on a gate insulating film covering a semiconductor substrate, followed by forming a source-drain diffusion layer within the semiconductor substrate. Then, atoms inhibiting a silicidation are selectively introduced into the source-drain diffusion layer, followed by forming a film of a metal having a high melting point on each of the gate electrode and the source-drain diffusion layer. The film of the high melting point metal is converted into a silicide film to form silicide films selectively on the gate electrode and the source-drain diffusion layer. The particular method permits retarding the formation of the silicide film on the source-drain diffusion layer so as to make it possible to obtain a semiconductor device of a salicide structure in which the silicide film formed on the gate electrode is thicker than the silicide film formed on the source-drain diffusion layer.
REFERENCES:
patent: 4080719 (1978-03-01), Wilting
patent: 4356211 (1982-10-01), Riseman
patent: 4635347 (1987-01-01), Lien et al.
patent: 5401674 (1995-03-01), Anjum et al.
patent: 5545574 (1996-08-01), Chen et al.
patent: 5569624 (1996-10-01), Weiner
patent: 5691212 (1997-11-01), Tsai et al.
patent: 5766997 (1998-06-01), Takeuchi
patent: 5824586 (1998-10-01), Wollesen et al.
patent: 5883418 (1999-03-01), Kimura
patent: 5888888 (1999-03-01), Talwar et al.
patent: 5889331 (1999-03-01), Bai
patent: 5891785 (1999-04-01), Chang
patent: 5933741 (1999-08-01), Tseng
patent: 5953612 (1999-09-01), Lin et al.
patent: 5970334 (1999-10-01), Tsuda
patent: 5970380 (1999-10-01), Lee
patent: 6018185 (2000-01-01), Mitani et al.
patent: 6060387 (2000-05-01), Shepela et al.
patent: 6100189 (2000-08-01), Hu et al.
patent: 6143613 (2000-11-01), Lin
patent: 6245622 (2001-06-01), Kawaguchi
patent: 6306763 (2001-10-01), Gardner et al.
patent: 62-66679 (1987-03-01), None
patent: 1-133368 (1989-05-01), None
patent: 2-54536 (1990-02-01), None
patent: 3-209834 (1991-09-01), None
patent: 4-230030 (1992-08-01), None
patent: 7-74128 (1995-03-01), None
patent: 8-64691 (1996-03-01), None
patent: 8-70053 (1996-03-01), None
patent: 8-148561 (1996-06-01), None
patent: 8-330254 (1996-12-01), None
patent: 9-8148 (1997-01-01), None
patent: 9-64349 (1997-03-01), None
patent: 9-64363 (1997-03-01), None
patent: 9-162300 (1997-06-01), None
patent: 10-135152 (1998-05-01), None
Miyashita Katsura
Takagi Mariko
Yoshimura Hisao
Au Bac H
Kabushiki Kaisha Toshiba
Picardat Kevin M
Pillsbury Winthrop Shaw & Pittman LLP
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