Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-08-30

2009-02-24

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07495293

ABSTRACT:
A semiconductor device includes a silicon region including Si, and a silicide film provided on the silicon region, the silicide film comprising a compound of Si with Ni, Co, Pd, or Pt and including Er.

REFERENCES:
patent: 5168332 (1992-12-01), Kunishima et al.
patent: 2006/0038229 (2006-02-01), Tsuchiya et al.
patent: 2006/0208320 (2006-09-01), Tsuchiya et al.
patent: 2005-209782 (2005-08-01), None
patent: 2006-060045 (2006-03-01), None
Kittl et al., “Silicides for 65 nm CMOS and Beyond,” Mat. Res. Soc. Symp. Proc. (2003), 765:267-278.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4121241